Intriguing magnetoelectric effect in two-dimensional ferromagnetic/perovskite oxide ferroelectric heterostructure

Large magnetoelectric effect in ferroelectric/piezomagnetic heterostructures

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a d...

Enhanced magnetoelectric effect in heterostructure of magnetostrictive alloy bars and piezoelectric single-crystal transformer.

We report an enhanced magnetoelectric (ME) effect in a heterostructure consisting of a long-type, longitudinally-longitudinally polarized 0.71Pb(Mg(1∕3)Nb(2∕3))O(3)-0.29PbTiO(3) (PMN-PT) piezoelectric single-crystal transformer with its input part sandwiched between two longitudinally magnetized Tb(0.3)Dy(0.7)Fe(1.92) (Terfenol-D) magnetostrictive alloy bars. The observed ME effect has two inde...

The memory effect of magnetoelectric coupling in FeGaB/NiTi/PMN-PT multiferroic heterostructure

Magnetoelectric coupling effect has provided a power efficient approach in controlling the magnetic properties of ferromagnetic materials. However, one remaining issue of ferromagnetic/ferroelectric magnetoelectric bilayer composite is that the induced effective anisotropy disappears with the removal of the electric field. The introducing of the shape memory alloys may prevent such problem by t...

First-principles studies of a two-dimensional electron gas at the interface in ferroelectric oxide heterostructures